Ahmad, Md. Masood and Anitha, D. (2022) Leakage Current Analysis in Mosfets Using Matlab GUI. In: Techniques and Innovation in Engineering Research Vol. 2. B P International, pp. 29-42. ISBN 978-93-5547-880-1
Full text not available from this repository.Abstract
Leakage current in MOSFETs has a mathematical expression. The mathematical expression is complex in nature. The leakage current dependent on different parameters. The aim of this chapter is to see how different parameters are going to contribute to the leakage current. The leakage current occurs when the input voltage is less than the threshold voltage. The threshold voltage is a minimum gate to source voltage required to turn on the MOSFET device. The leakage current below threshold voltage is also known as the subthreshold voltage. The subthreshold leakage current depends on channel length of MOSFET, channel width, permittivity of the material, temperature, mobility of charge carriers, gate to source voltage, threshold voltage, drain to source voltage and oxide thickness. These parameters are manipulated to see the impact of these parameters is presented through the graph in MATLAB GUI.
| Item Type: | Book Section |
|---|---|
| Subjects: | EP Archives > Engineering |
| Depositing User: | Managing Editor |
| Date Deposited: | 05 Oct 2023 11:15 |
| Last Modified: | 05 Oct 2023 11:15 |
| URI: | http://research.send4journal.com/id/eprint/2795 |
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